Abstract

The effects of radiation on the structural and electrical properties of electronic devices are complex in nature and have changed much during decades of device evolution. These effects are mainly because of radiation induced charge build-up in oxide and interfacial regions. This paper presents a details of these radiation induced effects, their dependencies, and the change in structural properties and electrical characterises of different devices before and after irradiation are measured and comparison results are reported. The Radiation hardens characteristics of different devices are measured in rad/s.

Keyword

CMOS Circuits, MOS Devices, HBTs, HEMTs, Bipolar Devices, Radiation Effects, Radiation Hardening.

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